Chemical bonding in carbon nitride films studied by X-ray spectroscopies

Citation
Wt. Zheng et al., Chemical bonding in carbon nitride films studied by X-ray spectroscopies, DIAM RELAT, 10(9-10), 2001, pp. 1897-1900
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
9-10
Year of publication
2001
Pages
1897 - 1900
Database
ISI
SICI code
0925-9635(200109/10)10:9-10<1897:CBICNF>2.0.ZU;2-L
Abstract
Carbon nitride films are deposited using dc magnetron sputtering in a N-2 d ischarge. The nature of chemical bonding of the films is investigated using X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structur e, and X-ray emission spectroscopy. X-Ray photoelectron spectroscopy spectr a show that Nls binding states depend on substrate temperature, in which tw o pronounced peaks can be observed. The near edge X-ray absorption fine str ucture at Cls and Nls exhibits a similar absorption profile in the pi* reso nance region, but the sigma* resonance is sharper in the Nls spectra. Reson ant N K-emission spectra show a strong dependence on excitation photo energ ies. Compared XPS Nls spectra with recent theoretical calculations by Johan sson and Stafstrom, two main nitrogen sites are assigned in which N bound t o sp(3) hybridized C and Sp(2) hybridized C, respectively. The correlation of X-ray photoelectron, X-ray absorption, and X-ray emission spectra for N in carbon nitride films is also discussed. (C) 2001 Elsevier Science B.V. A ll rights reserved.