XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assistedpulsed-laser deposition of SiC target

Amorphous SiCN films were prepared on Si(100) substrates by nitrogen ion-as sisted pulsed-laser ablation of an SiC target. The dependence of the formed chemical bonds in the films on nitrogen ion energy and the substrate tempe rature was investigated by an X-ray photoelectron spectroscopy (XPS). The f ractions of sp(2) C-C, sp(3) C-C, and sp(2) C-N bonds decreased, and that o f N-Si bonds increased when the nitrogen ion energy was increased without h eating during the film preparation. The fraction of Sp(3) C-N bonds was not changed by the nitrogen ion irradiation below 200 eV. Si atoms displaced c arbon atoms in the films and the SP3 bonding network was made between carbo n and silicon through nitrogen. This tendency was remarkable in the films p repared under substrate heating, and the fraction of sp(3) C-N bonds also d ecreased when the nitrogen ion energy was increased. Under the impact of hi gh-energy ions or substrate heating, the films consisted of sp(2) C-C bonds and Si-N bonds, and the formation of sp(3) C-N bonds was difficult. (C) 20 01 Elsevier Science B.V. All rights reserved.