A novel single gate MOS controlled current saturated thyristor

A novel single gate MOS controlled current saturation thyristor (MCST) devi ce is proposed. In on-state the MCST operates in thyristor-like mode at low anode voltage and enters the IGBT-like mode automatically with increasing anode voltage, offering a low on-state voltage drop and current saturation capability. Simulation results based on 6.5 kV trench devices indicate the turn-off energy loss of the MCST is reduced by over 35 % compared to the IG BT. The saturation current density of the MCST is strongly dependent on the on-set voltage of the p(+) buffer/n-well junction, leading to its excellen t safe operation area (SOA) and making it suitable for high power applicati ons.