This paper highlights the key advantages of the three-dimensional (3-D) MMI
C technology in the millimeter-wave frequency band and describes recently d
eveloped compact 3-D MMICs on GaAs and Si substrates. The 3-D MMIC technolo
gy offers high integration levels, compactness, simple design procedures, a
nd short fabrication turn-around time, resulting in millimeter-wave MMICs a
t greatly reduced cost. This paper also proposes a new methodology for MMIC
development based on 3-D/multilayer MMIC technology that accelerates the c
ost reduction of millimeter-wave MMICs. The new technology achieves compact
and highly integrated millimeter-wave MMICs that are extremely cost effect
ive.