Industrial application of heterostructure device simulation

We give an overview of the state-of-the-art of heterostructure RF-device si mulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current t ransport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar tr ansistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMO S-NT are presented in good agreement with measured data. The simulation exa mples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.