Layer transfer processes provide a new and largely unexplored route for the
fabrication of highly efficient monocrystalline thin-film Si solar cells.
Monocrystalline Si wafers serve as a substrate for epitaxial growth. A spec
ial surface conditioning of the substrate permits the transfer of a thin ep
itaxial film to an arbitrary carrier substrate. The growth substrate is the
n re-used to fabricate further cells. The possibility to use different mate
rials for growing the thin film and for carrying the devices broadens the d
esign flexibility and opens a new path for cost reduction. We describe and
discuss the various layer transfer processes that are currently being devel
oped for Si. A particular important point to work on in the future is the d
emonstration of a frequent re-use of the substrate and the development of a
large-area and low-cost epitaxy technique.