Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

We have analyzed the influence of the dielectric composition and the post d eposition rapid thermal annealing (RTA) treatment on the electrical charact eristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In 0.53Ga0.47As interfaces. The devices are characterized by means of capacita nce-voltage (C-V), deep-level transient spectroscopy (DLTS) and conductance transient analyses. Our results show that a simple cleaning step of the se miconductor surface prior to insulator deposition, and a post deposition RT A process are sufficient to obtain good-quality structures, the n-type bein g better than the p-type. In both cases, we conclude that a dielectric comp osition of x = 1.50 seems to be the best choice, and that the most adequate RTA temperature is between 500 degreesC and 600 degreesC.