Estimation of extreme ultraviolet power and throughput for extreme ultraviolet lithography

Extreme ultraviolet (EUV) power and wafer throughput were estimated based o n a scanning imaging system. The EUV power on a mask was estimated from the number of reflective mirrors, their reflectivity. resist sensitivity, scan ning speed and exposure time. Wafer throughput was estimated for one-way sc anning exposure. The EUV power required for a given wafer throughput was de termined. For a given acceleration of the mask stage and scanning length, t here is an optimal scanning speed that yields the maximum throughput. Assum ing an exposure time of 0.1 s and a resist sensitivity of 5 mJ/cm(2), the e stimated EUV power on a mask is about 10 W. For a scanning speed of 100 cm/ s and a stage acceleration of 3 x g, the resultant throughput should be 80 or more. The present analysis has shown that a high EUV power is required t o obtain the same throughput as that of optical lithography.