Influence of the microstructures on the dielectric properties of ZrTiO4 thin films at microwave-frequency range

The dielectric properties of paraelectric ZrTiO4 thin films were investigat ed in the microwave-frequency range. The dielectric losses (tan delta) and dielectric constants (epsilon) were successfully measured up to similar to 5 GHz using a circular-patch capacitor geometry. The effects of the microst ructures on the dielectric properties were also investigated. The ZrTiO4 fi lms were deposited at different temperature and RF power densities to vary the film microstructures. As the deposition temperature and RF power densit y increased, the film crystallinity was enhanced and dielectric losses decr eased. The microwave dielectric losses correlated very well with the level of local strain and unit-cell dilation, while the dielectric constants did not alter significantly.