Realization of Cu(111) single-oriented state on SiO2 by annealing Cu-Zr film and the thermal stability of Cu-Zr/ZrN/Zr/Si contact system

We investigated whether the Cu(111) single-oriented state having excellent electromigration resistance could be realized on SiO2,/Si and Si wafers by annealing Cu-Zr alloy films in vacuum. It was revealed that the Cu(111) sin gle-oriented state could be realized on both substrates of SiO2/Si and 7059 glass, when Cu-Zr films were annealed at 500 degreesC for 5 min. The obtai ned resistivities of the Cu-Zr films after annealing above 400 degreesC wer e lower than those (3-3.5 mu Omega cm) of Al alloy systems. Next, we examin ed the thermal stability of the Cu-Zr/ZrN/Zr/Si contact system, and compare d it with that of the CU/ZrN/Zr/Si system. As a result, although the therma l stability of the former was somewhat inferior to that of the latter, the system was sufficiently stable up to 550 degreesC, maintaining the single-o riented state of the Cu(111) overlayer and the ZrSi2 region with the lowest contact resistivity at the Si interface.