Development of plasma based ion implantation system using an electron cyclotron resonance plasma source with a mirror field and synthesis of carbon thin films

A new type of plasma based ion implantation system was developed. An electr on cyclotron resonance (ECR) plasma with a mirror field was used to generat e a high density plasma with an electron density of 2 x 10(11) CM-3. It was possible to apply negative high voltage pulses to the substrate up to - 10 kV/20 A using a tube switch. Carbon films were prepared on Si wafer substr ates with or without applying negative high voltage pulses. Dianiond-like c arbon (DLC) films were formed on each substrate placed on the hexagonal pri sm holder by the application of negative high voltage pulses to the substra te, though the polymer-like carbon films were formed without applying the p ulse bias to the substrate. The mean surface roughness and the hydrogen con tent in the DLC films were decreased with decreasing the applied voltage. I t is considered that the remaining hydrogen atoms were not bonded to the ca rbon atoms and that existed in the interstitial sites in the film from the results of the IR spectra which showed that the C-H bonds in the film had b een terminated by applying the pulse bias, The DLC film prepared by the app lication of the pulse bias of low voltages such as -2kV showed excellent tr ibological property.