The effect of Al interlayer on TiSi2 formation

Ti silicide technology using an Al/Ti bilayer is investigated to reduce TiS i2 sheet resistance on the arsenic (As)-implanted Si surface. A 38% reducti on resulting in the sheet resistance value of 1.62 Omega /sq was obtained u sing the bilayer of 5 nm Al/55 mn Ti. The resistivity of the film is 14.3 m u Omega .cm. These films showed a very smooth silicide/Si inter-face. X-ray diffraction observation shows a C54 phase with high (010) orientation. Voi d formation was not detected by transmission electron microscope (TEM) and scanning electron microscope (SEM) observations.