Electroluminescence of beta-FeSi2 light emitting devices

Ion beam synthesised beta -FeSi2 light emitting devices have been fabricate d by ion implantation of iron into pre-grown abrupt silicon p-n junctions. Several samples were fabricated by varying the implant conditions and the j unction characteristics (layer thickness and doping concentration). Light e mission at similar to 1.5 mum was obtained from all devices but the intensi ty decreased with increasing temperature. The electroluminescence quenching was found to depend on both the iron implant conditions and the characteri stics of the p-n junction.