Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B

Authors
Arai, M Nishiyama, N Azuchi, M Matsutani, A Koyama, F Iga, K
Citation
M. Arai et al., Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, JPN J A P 1, 40(6A), 2001, pp. 4056-4057
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
6A
Year of publication
2001
Pages
4056 - 4057
Database
ISI
SICI code
Abstract
We have demonstrated the monolithic integration of multi-wavelength vertica l cavities with highly strained GaInAs/GaAs quantum wells on a patterned Ga As (311)B substrate. Using a patterned substrate, the resonant wavelength c an be controlled in the range from 1.13 mum to 1.145 mum. The obtained resu lt may open up the field of multi-wavelength surface emitting lasers emitti ng in the 1. 1-1.24 mum band enabling their use in wavelength division mult iplexing local area networks (WDM-LANS).