Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface

A new growth system, which allows in situ monitoring of the crystal-solutio n interface, was developed and applied to grow SixGe1-x (x = 0.15) bulk cry stal with uniform composition by the multicomponent zone-melting method. By utilizing the system, the dynamical change of the growth rate was evaluate d from the nonlinear upward shift of the interface as a function of the gro wth time. Based on the monitoring, an attempt was made to balance the pulli ng rate of the ampoule with the growth rate of the crystal, which led to th e suppression of the upward shift of the growth interface, Consequently, th e compositional uniformity of the crystal in the growth direction was marke dly improved.