Study of the characteristics of defects in the oxidation-induced stacking fault-ring area in Czochralski silicon crystals by multi-chroic infrared light scattering tomography and transmission electron microscopy

A new defect morphology of dark stripes was observed in both as-grown and a nnealed Czoehralski silicon (CZ-Si) crystals by photoluminescence (PL) mapp ing of a multi-chroic infrared light scattering tomography (MC-IR-LST) syst em. The dark stripes in the as-grown CZ-Si crystal are believed to be highl y decorated striations, where grown-in defects have inhomogeneously segrega ted during the crystal growth. When this crystal was annealed at 1150 degre esC for 16h in an O-2 atmosphere, defects such as stacking faults, oxygen-p recipitate-related polyhedral defects, impurities and dislocation loops wer e observed around the dark stripes in the oxidation-induced stacking fault (OSF)-ring region using transmission electron microscopy (TEM) and the MC-I R-LST system. Investigation results suggested that the main grown-in defect s around dark stripes were oxygen precipitate nuclei and vacancy-related nu clei, which resulted in the formation of such defects during the thermal ox idation process.