Low-temperature formation of device-quality SiO2/Si interfaces using electron cyclotron resonance plasma-enhanced chemical vapor deposition

Low-temperature formation of SiO2/Si inter-faces using electron cyclotron r esonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) was invest igated. It was found that the density of interface trap states (D-it) decre ased with decreasing substrate temperature during film deposition and perfo rming the post deposition annealing at 333 degreesC in N-2 or H2O atmospher e. The average D-it was 3 to 4 x 10(11) cm(-2) eV(-1) when the substrate te mperature was 300 degreesC, while decreasing the substrate temperature to r oom temperature decreased it to 1.8 x 10(10) cm(-2) eV(-1). These results i ndicate that device-quality-SiO2/Si-interface formation is possible using l ow-temperature processes of ECR PECVD and post deposition annealing.