Simulation of the van der Pauw measurement for electrically anisotropic semiconductors using the finite-element method

Semiconductors, which are electrically anisotropic, are often obtained due to their methods of preparation or their own characteristics, Measurement v alues of such anisotropic semiconductors obtained by the van der Pauw metho d are simulated using the finite-element method (FEM). It is clarified that the values are quite sensitive to anisotropy of the carrier mobility, and variations in the measurement values can reach about two orders of magnitud e even when the anisotropy is small.