Fabrication of Si/LiNbO3 structure by using film bonding process

In this work, we studied a fabrication process of the surface acoustic wave (SAW)-semiconductor coupled device with a Si/LiNbO3 structure by a film bo nding process. The aim of this process is to realize a coupled device with a high performance and mass productivity for cost reduction. In order to re alize bonding silicon films on a LiNbO3 substrate, we proposed the process of releasing a Si thin film from a silicon-on-insulator (SOI) wafer and exa mined the etching conditions of a SiO2 (box) layer. We also tried to apply local heating treatment using a microwave and an infrared laser to enhance the bonding force between the Si film and LiNbO3 substrate, and successfull y bonded Si films released from a SOI wafer onto the LiNbO3 substrate. Base d on these results, a test device with a Si/LiNbO3 structure was fabricated and the interaction between SAW and the optically induced carrier in the S i film semiconductor was discussed.