Reducing of ron in vertical power-MOSFETs due to local channel doping

In this work we present a new approach for solving the tradeoff between bre akdown capability and on state resistance for Power-metal-oxid-semiconducto r field effect transistor (MOSFET) devices. Therefore we use a vertical tra nsistor on an epitaxial layer. This concept allows the adjustment of the br eakdown voltage due to the thickness of the epi-layer separately from the o n-state resistance, which is defined by the vertical transistor. The transi stor was fabricated by means of molecular beam epitaxy (MBE), which allows very small channel length and doping control on atomistic scale. Devices wi th breakdown voltages between 12 V and 40 V were produced. It is also shown that the usage of local channel doping instead of homogenous doping in the switching transistor reduces the on state resistance of the device signifi cantly.