Novel single electron memory device using metal nano-dots and Schottky in-plane gate quantum wire transistors

We report on the successful realization of a novel single electron memory d evice utilizing a Schottky in-plane gate (IPG) quantum wire transistor (QWT r) with nano Schottky metal dots whose position and size can be precisely c ontrolled. Current-voltage (I-V) characteristics of the nano-metal dot form ed on n-GaAs showed clear hysteresis which suggests charging of the nano-me tal dot. A fabricated single electron memory device utilizing nano-metal do ts showed clear threshold voltage shift once the bias was applied to the ch arging control gate of the nano-metal dot. This indicates successful memory operation of the fabricated device.