A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 run strained silicon-on-insulator MOSFETs

A novel fabrication technique for relaxed and thin SiGe layers on buried ox ide (BOX) layers, i.e., SiGe on insulator (SGOI), with a high Ge fraction i s proposed and demonstrated for a plication to strained-Si metal-oxide-semi conductor field effect transistors (MOSFETs). This fabrication technique is based on the high-temperature oxidation of the SGOI layers with a lower Ge fraction. It is found that Ge atoms are rejected from the oxide and conden sed in the SGOI layers. The conservation of the total amount of Ge atoms in the SGOI layer is confirmed by structural and compositional analyses of dr y-oxidized SGOI layers at 1050 degreesC of different initial thicknesses an d oxidation times. Using this technique, a 16-nm-thick SGOI layer with the Ge fraction as high as 0.57 is successfully obtained. The Ge profiles acros s the SGOI layers are quite uniform and the layers a-re almost completely r elaxed. Significant dislocation generation in the SGOI layer is not observe d after the oxidation. This is a promising technique for application to sub -100 nm fully-depleted silicon-on-insulator (SOI) MOSFETs with strained-Si or SiGe channels.