A single chip automotive control LSI using SOI bipolar complimentary MOS double-diffused MOS

Using the example of an air bag controller, a single chip solution for auto motive sub-control systems is investigated, by using a technological combin ation of improved circuits, bipolar complimentary metal oxide silicon doubl e-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SO I). For circuits, an automotive specific reduced instruction set computer ( RISC) center processing unit (CPU), and a novel, all integrated system cloc k generator, dividing digital phase-locked loop (DDPLL) are proposed. For t he device technologies, the authors use SOI-BiCDMOS with trench dielectric- isolation (TD) which enables integration of various devices in an integrate d circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desire d device characteristics and high electromagnetic interference (EMI) immuni ty. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS tec hnologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).