Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer

We propose the Pt/SrBi2Ta2O9/Ta2O5/Si Structure for the application of nond estructive read-out memory. The Ta2O5 films were deposited on p-type Si (10 0) substrates by rf-magnetron sputtering and the SrBi2Ta2O9 films were depo sited by metal organic deposition (MOD) method. Coercive field that decisiv ely affects on the memory window becomes greater by inserting the Ta2O5 buf fer layer between ferroelectric thin film and silicon substrate and thus th e memory window also increases with an electric field to the SrBi2Ta2O9. Th e C-V characteristics of the Pt/SrBi2Ta2O9 (195 nm)/Ta2O5 (36 nm)/Si struct ure show memory window of 0.5-2.7 V at the applied voltage of 3-7 V. The le akage current density is 1.7 x 10(-8) A/cm(2), even at the high voltage of 10 V.