A Body-Effect-assisted NOR-type (BeNOR) multilevel flash memory

We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for mul tilevel storage application. Body effect assisted self-convergent programmi ng employs secondary electron injection but a different operation bias from the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately progra mmed states are accomplished by the linear dependence of V-TH on the bit-li ne voltage; therefore, parallel multilevel programming and elimination or r eduction of bit-by-bit verification can be achieved. In this paper, program ming power consumption and reliability considerations are also assessed for efficient and long-term operation.