We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for mul
tilevel storage application. Body effect assisted self-convergent programmi
ng employs secondary electron injection but a different operation bias from
the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately progra
mmed states are accomplished by the linear dependence of V-TH on the bit-li
ne voltage; therefore, parallel multilevel programming and elimination or r
eduction of bit-by-bit verification can be achieved. In this paper, program
ming power consumption and reliability considerations are also assessed for
efficient and long-term operation.