On the capacitance coupling ratios of a source-side injection flash memorycell

A new method for measuring the capacitance coupling ratios of non-volatile memory cells is reported. This method is applied to the source-side-injecti on (SSI) Flash cell. Conventional extraction methods are complicated by the presence of the select transistor. In this work the coupling ratios of a s ource-side injection Flash memory cell are extracted from source-follower v oltage (V-sf) measurements of the Flash cell and a reference cell, in the r ead mode. Validity of these coupling ratios and a two-transistor memory cel l representation under programming condition are confirmed via two-dimensio nal device simulations. These coupling ratios provide a solid base for a mu ltilevel Flash cell circuit model.