GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals

The characterizations of n-type doped GaN, p-type doped GaN and n-type dope d In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vap or deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni a nd Pt metals. The dark and illuminated current-voltage characteristics of G aN and InGaN MSM photodetectors with different Schottky metals were studied . The n-GaN MSM photodetectors with Au Schottky contacts showed better resp onsivity than those with other metals and they ere also better than Au/p-Ga N and Ti/n-In(0.2)G(0.8)N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the character istics of photocurrents were also studied.