Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy

In the molecular beam epitaxy (MBE) growth of InAs quantum dots (QDs), we i nvestigated the dot formation via the self size-limiting process. Accumulat ion of size-limited InAs QDs resulted in narrow inhomogeneous broadening of photoluminescence (PL) linewidth and low energy shift of PL peak position. Atomic force microscopy (AFM) and reflection high-energy electron-beam dif fraction (RHEED) observations revealed the appearance of {136} facets on th e side wall of size-limited InAs dots. It was proposed that the facet forma tion played an important role in the self size-limiting behavior.