Zl. An et al., Analysis of nanostructure formation using photon/electron spectroscopies: Cu on SiC substrates, JPN J A P 1, 40(3B), 2001, pp. 1927-1928
Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED
) studies of Cu deposition on a 6H-SiC(0001) surface have shown fine-partic
le formation with an average size of approximately 2 nm for a 6H-SiC(0001)
C-face at a nominal Cu coverage of approximately 2 ML, where its size depen
ds on the nominal Cu film thickness. Soft-X-ray emission spectroscopy (SXES
) of an annealed Cu(60 nm)/3C-SiC(001) specimen clarified that little react
ion occurred at the Cu/SiC interface. The heated specimen is considered to
have Cu islands on top.