Coulomb charging effects in an open quantum dot device at zero magnetic field

Citation
Ct. Liang et al., Coulomb charging effects in an open quantum dot device at zero magnetic field, JPN J A P 1, 40(3B), 2001, pp. 1936-1940
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
3B
Year of publication
2001
Pages
1936 - 1940
Database
ISI
SICI code
Abstract
We report low-temperature conductance measurements of an open quantum dot d evice formed in a clean one-dimensional (1D) channel. At zero magnetic fiel d. continuous and periodic oscillations superimposed upon ID ballistic cond uctance steps are observed. We ascribe the observed conductance oscillation s when the conductance through the dot G exceeds 2e(2)/h, to experimental e vidence for Coulomb charging effects in an open dot. This is supported by t he evolution of the oscillating features for G > 2e(2)/h as a function of b oth temperature and barrier transparency.