Electronic structure, Stark effect and optical properties of multistacked dots

We present the results of effective mass calculations for the electronic st ructure and optical properties of stacked quantum dots in the presence of a longitudinal electric field. Attention is focussed on strongly stacked dot structures, in which a vertical field acts on the electron in the same way as found in a quantum well. We have studied the dipole selection rules and oscillator strengths of stacked dots for intraband transitions (far-infrar ed absorption). In the case of interband transitions, we have studied the e ffect of a longitudinal electric field on the overlap between electron and hole wavefunctions. We have also calculated the absorption spectrum for str uctures of attached dots, taking into account Gaussian fluctuations in the vertical and lateral dimensions.