We present an experimental and theoretical investigation of the longitudina
l quantum confined Stark effect in strain-induced parabolic InGaAs quantum
dots. The electric field is applied in the plane perpendicular to the growt
h axis (quantum well plane), through a sub-micron gap opened in a metallic
contact, which contains just a few dots. The changes in the microphotolumin
escence (mu -PL) spectra were measured versus the bias. at low temperature.
Due to the device geometry, the electric field profile in the gate is not
constant resulting in an asymmetric Stark effect as a function of the appli
ed field polarity. Calculations of the field profile in the conatct gap and
of the distorsion of the parabolic-like potential as a function of the app
lied field have been made in order to correlate the observed changes in the
electro-optical properties of the dots with the carrier spill over and wav
efunction modifications under electric field.