Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices

The electrical characteristics of the self-assembled quantum dots embbeded in GaAs wells of the GaAs/AlAs superlattices were studied by capacitance sp ectroscopy and were compared with results obtained for the dots embbeded in bulk GaAs. A much stronger electron localization was detected for the quan tum dots embedded in the superlattice in comparison with those embedded in bulk GaAs. As a consequence, the electrical characteristics of the structur es with quantum dots grown in superlattices were found to be significantly thermo-stabilized. It was shown that these structures present different str engths of the localization of electrons caused by the effective increase of the heights of the barriers when the dots were grown in the superlattices.