Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

Experiments on side-gated silicon single electron transistors (SET) fabrica ted on a heavily doped thin silicon-on-insulator substrate are reported. So me of the devices showed single-island-like and some multi-island-like beha viour, but the properties of individual samples changed with time. Single-e lectron gate modulation was observable up to T = 100 K, at least. A slow re sponse of SET current to a large change in gate voltage was observed, but t he process speeded up under illumination.