We study the photoluminescence and laser properties of (InGa)As/(AlGa)As se
lf-assembled quantum dots (QDs). By varying the Al content in the (AlGa)As
matrix and/or stacking several QD layers, the room temperature dot luminesc
ence is tuned over a wavelength range from 0.8 mum to 1.3 mum. In particula
r, by embedding the (InGa)As QD layer in a GaAs/AlGaAs quantum well, an hig
h temperature light emission from the dots can be obtained (up to 500 K). W
e also study the properties of QD lasers and show that both cavity effects
and thermal coupling between dots play an important role in determining the
QD laser emission.