Fabrication and characterization of sub-micron metal-ferroelectric-insulator-semiconductor field effect transistors with Pt/Pb5Ge3O11/ZrO2/Si structure

Authors
Zhang, FY Hsu, ST Ono, Y Ulrich, B Zhuang, WW Ying, H Stecker, L Evans, DR Maa, J
Citation
Fy. Zhang et al., Fabrication and characterization of sub-micron metal-ferroelectric-insulator-semiconductor field effect transistors with Pt/Pb5Ge3O11/ZrO2/Si structure, JPN J A P 2, 40(6B), 2001, pp. L635-L637
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
6B
Year of publication
2001
Pages
L635 - L637
Database
ISI
SICI code
Abstract
The first metal-ferroelectric-insulator-semiconductor field effect transist ors (MFIS FETs) using Pt/Pb5Ge3O11/ZrO2/Si structure has been successfully fabricated. The integration process is simple and reliable, and it is fully compatible with conventional complementary metal oxide semiconductor (CMOS ) process. The smallest working device obtained is 0.3 mum x 0.5 mum (L x W ). The memory window is as large as 3 V and it is not dependent on device s ize. The endurance of the device is at least 10(8) cycles without degradati on. The memory window decreased to 80% and 75% of initial values after 10(4 ) seconds retention tests at room temperature and 100 degreesC respectively .