Photoluminescence analysis of {311} interstitial defects in wafers synthesized by separation by implanted oxygen

Authors
Takiguchi, J Tajima, M Ogura, A Ibuka, S Tokumaru, Y
Citation
J. Takiguchi et al., Photoluminescence analysis of {311} interstitial defects in wafers synthesized by separation by implanted oxygen, JPN J A P 2, 40(6A), 2001, pp. L567-L569
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
6A
Year of publication
2001
Pages
L567 - L569
Database
ISI
SICI code
Abstract
The interstitial-type {311} planar defects introduced in wafers synthesized by separation by implanted oxygen (SIMOX) have been investigated by photol uminescence (PL) spectroscopy and transmission electron microscopy (TEM) De ep-level PL of low-dose SIMOX wafers with closes of 2, 4, and 6 x 10(17) cm (-2) were analyzed under various excitations with different penetration dep ths, In as-implanted wafers, the 0.903 eV line associated with the {311} de fects appeared in the region below the oxygen implanted layer. Correspondin gly, TEM observation revealed rod-like defects due to the {311} defects in the same region. After annealing, the 0.903 eV line disappeared and disloca tion-related lines became visible. These results indicate that the {311} de fects are generated below the implanted layer and are extended to dislocati ons after annealing.