Electrical and physical properties of lead aluminum niobate-lead titanate ferroelectric thin films prepared by chemical solution deposition process

A new ferroelectric 0.2Pb(1.1)(Al1/2Nb1/2)O-3-0.8Pb(1.1)TiO(3) thin film wi th 430 nm thickness was fabricated successfully on Pt(1 1 1)/Ti/SiO2/Si sub strate using a chemical solution deposition process. This thin film was a p erovskite single phase with a (100) dominating orientation. The dielectric constant and the dielectric loss factor are 600 and 0.015, respectively. A broad peak with a value of about 730 at the Curie temperature of 340 degree sC appeared in the plot of the temperature dependence of the dielectric con stant. The remanent polarization (P-r) and the coercive field (E-c) are 12 mum/cm(2) and 38 kV/cm, respectively. The addition of Pb(Al1/2Nb1/2)O-3 is more effective than individual aluminum or niobium doping in improving the dielectric and ferroelectric properties.