Beryllium-implanted P-type GaN with high carrier concentration

We report the results of beryllium implantation in Mg-doped GaN to obtain a high hole concentration and lower activation energy for Mg. The metal orga nic chemical vapor deposition (MOCVD)-grown Mg-doped GaN samples were impla nted with Be ions at two different energies of 50 keV and 150 keV and a dos e of 10(14) cm(-2). The implemented samples were subsequently annealed at 1 100 degreesC for 60 s. The annealed samples showed an increase of hole conc entration by three orders of magnitude from the non-implanted value of 5.5 x 10(16) to 8.1 x 10(19) cm(-3) as determined by Hall measurement. The acti vation energy of Mg dopants for the implanted annealed samples estimated fr om the temperature dependence of the photoluminescence data is about 170 me V, which is nearly 30% lower than that for the as-grown samples.