High-temperature hardness of bulk single-crystal A1N

Authors
Yonenaga, I Nikolaev, A Melnik, Y Dmitriev, V
Citation
I. Yonenaga et al., High-temperature hardness of bulk single-crystal A1N, JPN J A P 2, 40(5A), 2001, pp. L426-L427
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
5A
Year of publication
2001
Pages
L426 - L427
Database
ISI
SICI code
Abstract
The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers w as measured at elevated temperatures and compared with that of other semico nductors. A Vickers indentation method was used to determine the hardness u nder an applied load of 0.5-5 N in the temperature range 20-1400 degreesC. The average hardness was measured as 17.7 GPa at room temperature. AIN exhi bits a hardness higher than that of GaN in the entire temperature range inv estigated. A high mechanical stability for AIN at high temperatures is dedu ced.