1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition

Authors
Nishiyama, N Arai, M Shinada, S Azuchi, M Matsutani, A Miyamoto, T Koyama, F Iga, K
Citation
N. Nishiyama et al., 1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition, JPN J A P 2, 40(5A), 2001, pp. L437-L439
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
5A
Year of publication
2001
Pages
L437 - L439
Database
ISI
SICI code
Abstract
A highly strained GaInAs vertical-cavity surface-emitting laser (VCSEL) emi tting at 1.12 mum has been realized on a GaAs(311)B substrate by metal orga nic chemical vapor deposition (MOCVD) for the first time, The threshold cur rent of an 8 mum oxide aperture device was as low as 0.9 mA. This device op erated at up to 170 degreesC without a heatsink under the CW condition. The polarization direction of the oscillation mode was stable and the orthogon al polarization suppression ratio (OPSR) was 30 dB. The operating lifetime of over 2000 under room-temperature CW conditions was confirmed without any degradation in spite of high strain of over 2%.