Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure

We fabricated a 1T2C-type ferroelectric memory array structure with 2 x 3 c ells on a silicon-on-insulator (SOI) substrate. Each cell in the array is c omposed of a metal-ox ide-semiconductor field-effect transistor (MOSFET) an d two ferroelectric capacitors with the same area. This type of memory has unique features such as nonvolatile data storage, nondestructive data read- out, and high-density integration based on the scaling rule. It was found t hat binary data could be correctly stored into a selected cell of the memor y array after optimizing the gate SiO2 thickness of the MOSFET. It was also found that the written data could be correctly read out with a current rat io as large as 10 for "0" and "1" data.