Single-crystal MgO is a good candidate substrate for growing metal oxide fi
lms, even though it has a few drawbacks, such as surface degradation caused
by its easy reaction with H2O and CO2 and high concentration of impurities
originating from the method by which it is grown. We propose a thermal ann
ealing carried out under novel conditions. 700 degreesC and 1 atm O-2 atmos
phere, for resolving these drawbacks. An atomically flat surface with a hal
f-unit-cell-high step-and-terrace feature was realized on a MgO(100) substr
ate with a reduced surface segregation of impurities.