Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemicalvapor deposition

4H-SiC has been homoepitaxially grown on off-axis 4H-SiC(0001) at 1700 degr eesC by chimney-type vertical hot-wall chemical vapor deposition. Mirror-li ke surface morphology can be obtained with high growth rates up to 21 mum/h . Epitaxial growth under C-rich conditions at growth rates of 10-14 mum/h l eads to enhanced macrostep formation but reduced doping and deep trap conce ntrations of 7.2 x 10(14) cm(-3) and 1.3 x 10(13) cm(-3). respectively. Goo d thickness and doping uniformities of 4% and 6%, respectively, are achieve d with this growth technique.