High-performance X-ray mask fabrication using TaGeN absorber and dummy pattern method for sub-100 nm proximity X-ray lithography

We have developed an X-ray mask using TaGeN as the X-ray absorber and the d ummy pattern method. Variation of the absorber pattern etching shift width was only 3.3 nm (3 sigma) in a chip and mask pattern critical dimension (CD ) variation was less than 4.5 nm (3 sigma) for a 70 nm future pattern size. Mask distortion due to absorber etching was less than 8 nm in each mask. T his combination of TaGeN and the dummy pattern method is an excellent candi date for use in the fabrication of an X-ray mask for sub-100 nm X-ray litho graphy.