Efficient free-exciton recombination emission from diamond diode at room temperature

Free-exciton recombination emission of 235 nm in wavelength is obtained by current injection at room temperature from a diamond-based pn junction diod e composed of B-doped crystal grown by high-temperature, high-pressure synt hesis and a S-doped homoepitaxial layer grown by the chemical vapor deposit ion method. The diode shows a clear rectification characteristic and a high external quantum efficiency of excitonic emission, 8 x 10(-5), which indic ates that the excitonic emission of diamond is a good candidate for applica tion to semiconductor UV-light-emitting devices. A defect-induced light emi ssion and large leakage current indicate that a higher UV emission efficien cy is expected with improvement of the junction quality.