Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon

Citation
H. Matsumura et al., Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon, JPN J A P 2, 40(3B), 2001, pp. L289-L291
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
3B
Year of publication
2001
Pages
L289 - L291
Database
ISI
SICI code
Abstract
A novel method, called the catalytic chemical sputtering method, is propose d. In this method, hydrogen atoms generated by the catalytic cracking react ion between a heated tungsten catalyzer and hydrogen gas, react with solid silicon to draw out silicon-hydride species from it chemically, and such sp ecies are again decomposed by the catalytic cracking reaction or directly t ransported to form silicon films on substrates. Thus, silicon films are pre pared at low substrate temperatures without using silane or disilane gases. By this method, polycrystalline silicon with a grain size larger than 1 mu m is obtained at substrate temperatures of approximately 400 degreesC.