H. Matsumura et al., Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon, JPN J A P 2, 40(3B), 2001, pp. L289-L291
A novel method, called the catalytic chemical sputtering method, is propose
d. In this method, hydrogen atoms generated by the catalytic cracking react
ion between a heated tungsten catalyzer and hydrogen gas, react with solid
silicon to draw out silicon-hydride species from it chemically, and such sp
ecies are again decomposed by the catalytic cracking reaction or directly t
ransported to form silicon films on substrates. Thus, silicon films are pre
pared at low substrate temperatures without using silane or disilane gases.
By this method, polycrystalline silicon with a grain size larger than 1 mu
m is obtained at substrate temperatures of approximately 400 degreesC.