Electrically active defects in HgCdTe and opto-electronic properties of focal plane array by laser beam induced current

A high-resolution and nondestructive optical characterization technique cal led laser beam-induced current (LBIC) was utilized to detect electrically a ctive defects in HgCdTe wafers. It was also used to study the optoelectroni c properties in photovoltaic detector elements for focal plane array withou t the requirement of any electrical contacts to individual detector element s. The LBIC was detected in HgCdTc wafers. The periodic distribution of LBI C was observed in photovoltaic detector with P-N junction array. The unifor mity for the performance of the diodes in an array can then be assessed by examining qualitatively the LBIC image and by analyzing quantitatively the profile of LBIC signal corresponding to individual diodes.