Preparation and characterization of thermally sensitive vanadium oxide films

A new method of preparation of vanadium oxide films was reported. A thin VO x(x <2.5) film with good thermal sensitivity was prepared by ion beam sputt ering of a V2O5 powder target and with a subsequent reduction annealing in mixing gas of N-2 + H-2. The VOx (x < 2.5) film has a negative temperature coefficient of resistance (TCR) of (-1 similar to -4)%K-1,and an activation energy of 0. 078eV similar to0.110eV. The relatively high TCR as well as l ow formation temperature shows that the film prepared by the new method is promising for application as thermal sensor material in an uncooled IR micr obolometer.