Photocurrent and electron interference of GaAs/AlGaAs multiquantum well structure

Authors
Cheng, XK Ma, HL Zhou, JM Huang, Q
Citation
Xk. Cheng et al., Photocurrent and electron interference of GaAs/AlGaAs multiquantum well structure, J INF M W, 20(4), 2001, pp. 318-320
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
20
Issue
4
Year of publication
2001
Pages
318 - 320
Database
ISI
SICI code
1001-9014(200108)20:4<318:PAEIOG>2.0.ZU;2-1
Abstract
Photocurrent spectrum for GaAs/AlGaAs multiquantum well structure was measu red at 77K. A strong photocurrent peak at nu = 1589cm(-1),i. e. lambda= 6. 29 mum,in the photocurrent spectrum was observed. It was believed that the strong photocurrent peak is relevant to the interference of electrons above the barrier of multiquantum well structure. The calculated position of pea k of photocurrent on the basis of theory of electron interference is in ver y good agreement with the experimental results.